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GVT71256E18 Datasheet - Cypress Semiconductor

GVT71256E18 (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Selection Guide 7C1325A-117 71256E18-7 Maximum Access Time (ns) Ma.

GVT71256E18 Features

* Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns

GVT71256E18 Datasheet (685.75 KB)

GVT71256E18 Datasheet Preview — Preview of GVT71256E18 PDF

Datasheet Details

Part number:

GVT71256E18

Manufacturer:

Cypress Semiconductor

File Size:

685.75 KB

Description:

(gvt71256e18 / gvt7c1325a) 256k x 18 synchronous flow through burst sram.

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GVT71256E18 GVT71256E18 GVT7C1325A 256K Synchronous Flow Through Burst SRAM Cypress Semiconductor

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