Description
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.
Features
- Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V.
- 5% and +10% power supply 2.5V or 3.3V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSSQ at all inputs and outputs Common data inputs and data outputs Byte Write Enable and G.
GVT71256E18_CypressSemiconductor.pdf