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BTC4505M3 NPN Transistor

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Description

CYStech Electronics Corp.High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Spec.No.: C210M3 Issued Date : 2003.05.15 Revised Date :2014.07.24.

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Features

* High breakdown voltage, BVCEO (min)=400V.
* Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA.
* Complementary to BTA1759M3.
* Pb-free lead plating and halogen-free package. Symbol BTC4505M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Ordering Information

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