* Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
* Excellent DC current gain characteristics
* Complementary to BTB1386N3
* Pb-free lead plating and halogen-free package Symbol BTD965N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum
BTD965N3 Datasheet (327.25 KB)
BTD965N3
Cystech Electonics
327.25 KB
Npn planar transistor.
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD965N3
Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2015.02.12 Pa.
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