BTN6517N3 High Voltage NPN Epitaxial Planar Transistor

Cystech Electonics

Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C231N3 Issued Date : 2003.04.12 Revised Date : Page No.: 1/4 High Voltage NPN Epitaxial P.

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Datasheet Specifications

Part number: BTN6517N3
Manufacturer: Cystech Electonics
File Size: 176.35 KB
Datasheet: BTN6517N3_CystechElectonics.pdf
Description: High Voltage NPN Epitaxial Planar Transistor

Features

* High Breakdown Voltage:BVCEO≥350V
* Complementary to BTP6520N3 Symbol BTN6517N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
* -continuous Power Diss

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN6517N3 CYStek Product Specification

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BTN6517N3 High Voltage NPN Epitaxial Planar Transistor Cystech Electonics

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