* Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A
* Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 150V 26A 18.4A 4.6A 3.7A 44mΩ(typ) 43mΩ
MTA50N15H8 Datasheet (540.17 KB)
MTA50N15H8
Cystech Electonics
540.17 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N.
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