* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-3.6A RDSON@VGS=-2.5V, ID=-3
MTA50P01SN3 Datasheet (625.43 KB)
MTA50P01SN3
Cystech Electonics
625.43 KB
-14v p-channel mosfet.
CYStech Electronics Corp. Spec. No. : C101N3 Issued Date : 2015.09.09 Revised Date : 2016.10.11 Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFE.
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