* RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A
* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual P-ch MOSFET package
* Pb-free lead plating & Halogen-free package RDSON(MAX)@VGS=-4.5V, ID=-6A -30V -8A 18mΩ(typ.) 27mΩ(typ.) Equivale
MTB24B03Q8 Datasheet (303.98 KB)
MTB24B03Q8
Cystech Electonics
303.98 KB
Dual p-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 1/9 Dual P-Channel Logic Level Enhancemen.
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