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MTB24B03Q8 Dual P-Channel Enhancement Mode Power MOSFET

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Description

CYStech Electronics Corp.Spec.No.: C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No.: 1/9 Dual P-Channel Logic Level Enhancemen.

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Datasheet Specifications

Part number
MTB24B03Q8
Manufacturer
Cystech Electonics
File Size
303.98 KB
Datasheet
MTB24B03Q8-CystechElectonics.pdf
Description
Dual P-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)=24mΩ(max. )@VGS=-10V, ID=-8A
* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual P-ch MOSFET package
* Pb-free lead plating & Halogen-free package RDSON(MAX)@VGS=-4.5V, ID=-6A -30V -8A 18mΩ(typ. ) 27mΩ(typ. ) Equivale

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