MTB25N03KN3 N-Channel Enhancement Mode MOSFET

Cystech Electonics

MTB25N03KN3 Description

CYStech Electronics Corp.Spec.No.: C122N3 Issued Date : 2015.09.08 Revised Date : Page No.: 1/9 30V N-Channel Enhancement Mode MOSFET MTB25N03KN.

MTB25N03KN3 Features

* Lower gate charge
* ESD protected gate
* Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.7mΩ Equivalent Circuit MTB25N03KN3 Outline SO

MTB25N03KN3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB25N03KN3 CYStek Product Specification

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MTB25N03KN3 Datasheet Preview — Preview of MTB25N03KN3 PDF

Datasheet Details

Part number: MTB25N03KN3
Manufacturer: Cystech Electonics
File Size: 411.88 KB
Datasheet: MTB25N03KN3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET Cystech Electonics

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