* Lower gate charge
* ESD protected gate
* Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.7mΩ Equivalent Circuit MTB25N03KN3 Outline SO
MTB25N03KN3 Datasheet (411.88 KB)
MTB25N03KN3
Cystech Electonics
411.88 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp. Spec. No. : C122N3 Issued Date : 2015.09.08 Revised Date : Page No. : 1/9 30V N-Channel Enhancement Mode MOSFET MTB25N03KN.
📁 Related Datasheet
LSD3561-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3765-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3554-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3552-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3551-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3553-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3763-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3555-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3151-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3162-XX Multilayer Ferrite Chip Beads (MAGNETIC)
