* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mĪ© 5.1mĪ© Symbol MTB5D0P03H8 Outline Pin 1 EDFN5Ć6 Gļ¼Gate Dļ¼Drain Sļ¼S
MTB5D0P03H8 Datasheet (406.12 KB)
MTB5D0P03H8
Cystech Electonics
406.12 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOS.
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