MTB5D0P03H8 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No.: 1/ 9 P-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTB5D0P03H8
Manufacturer: Cystech Electonics
File Size: 406.12 KB
Datasheet: MTB5D0P03H8-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mΩ 5.1mΩ Symbol MTB5D0P03H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：S

MTB5D0P03H8 Distributors

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MTB5D0P03H8 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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