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CYStech Electronics Corp.
Spec. No. : C965Q8 Issued Date : 2014.12.03 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03Q8 BVDSS ID@VGS=-10V, TA=25°C
ID@VGS=-4.5V, TA=25°C
ID@VGS=-10V, TC=25°C
ID@VGS=-4.5V, TC=25°C
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and halogen-free package
RDSON@VGS=-10V, ID=-20A RDSON@VGS=-4.5V, ID=-17A
-30V -20A -16A -28A -22A
3.0mΩ(typ) 4.
MTB5D0P03Q8 Datasheet
