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MTB5D0P03FP - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating package BVDSS ID @ VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -56A 4.2mΩ(typ) 4.8mΩ(typ) Symbol MTB5D0P03FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device Package MTB5D0P03FP-0-UB-S TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friend.

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Datasheet Details

Part number MTB5D0P03FP
Manufacturer CYStech Electronics
File Size 354.76 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB5D0P03FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB5D0P03FP Spec. No. : C965FP Issued Date : 2015.07.20 Revised Date : 2015.07.21 Page No. : 1/8 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID @ VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -56A 4.2mΩ(typ) 4.