• Part: MTB5D0P03H8
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 406.12 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mΩ 5.1mΩ Symbol Outline Pin 1 EDFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTB5D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS pliant...