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MTB5D0P03H8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mΩ 5.1mΩ Symbol MTB5D0P03H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB5D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS complia.

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Datasheet Details

Part number MTB5D0P03H8
Manufacturer Cystech Electonics
File Size 406.12 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB5D0P03H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mΩ 5.