Datasheet4U Logo Datasheet4U.com

MTB5D0P03J3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & halogen-free package Equivalent Circuit MTB5D0P03J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB5D0P03J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13.

📥 Download Datasheet

Datasheet Details

Part number MTB5D0P03J3
Manufacturer Cystech Electonics
File Size 345.08 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB5D0P03J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -88A 3.7mΩ(typ) 5.