• Part: MTB5D0P03J3
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 345.08 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -88A 3.7mΩ(typ) 5.1mΩ(typ) Features - Low Gate Charge - Simple Drive Requirement - Pb-free lead plating & halogen-free package Equivalent Circuit Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB5D0P03J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound...