* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free and halogen-free package RDSON@VGS=-10V, ID=-20A RDSON@VGS=-4.5V, ID=-17A -30V -20A -16A -28A -22A 3.0mΩ(typ) 4.2mΩ(typ) Equivalent Circuit MTB5D0P03Q8 Outline SOP-8 G：Gate S：Source
MTB5D0P03Q8 Datasheet (346.53 KB)
MTB5D0P03Q8
Cystech Electonics
346.53 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C965Q8 Issued Date : 2014.12.03 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P.
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