MTB5D0P03Q8 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C965Q8 Issued Date : 2014.12.03 Revised Date : Page No.: 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P.

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Datasheet Specifications

Part number: MTB5D0P03Q8
Manufacturer: Cystech Electonics
File Size: 346.53 KB
Datasheet: MTB5D0P03Q8-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free and halogen-free package RDSON@VGS=-10V, ID=-20A RDSON@VGS=-4.5V, ID=-17A -30V -20A -16A -28A -22A 3.0mΩ(typ) 4.2mΩ(typ) Equivalent Circuit MTB5D0P03Q8 Outline SOP-8 G：Gate S：Source

Applications

* or systems.
* CYStek assumes no liability for any consequence

MTB5D0P03Q8 Distributors

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MTB5D0P03Q8 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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