MTN2510J3 - N-Channel Enhancement Mode Power MOSFET
MTN2510J3 Features
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=30A VGS=6V, ID=20A 100V 50A 19mΩ 23mΩ Symbol MTN2510J3 Outline TO-252(DPAK)
