BTN1053L3 - NPN Epitaxial Planar Transistor

Cystech Electonics

Datasheet Details

Part number	BTN1053L3
Manufacturer	Cystech Electonics
File Size	186.53 KB
Description	NPN Epitaxial Planar Transistor
Datasheet	BTN1053L3_CystechElectonics.pdf

5W power dissipation.
Excellent HFE Characteristics up to 1A.
Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA).
5A peak pulse current Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤300µs, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg.

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Published: Mar 27, 2009 |