Datasheet Details
| Part number | MJE13003 |
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| Manufacturer | DC COMPONENTS |
| File Size | 222.86 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | MJE13003-DCCOMPONENTS.pdf |
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Overview: DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJE13003 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR.
| Part number | MJE13003 |
|---|---|
| Manufacturer | DC COMPONENTS |
| File Size | 222.86 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | MJE13003-DCCOMPONENTS.pdf |
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Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
TO-126 Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEV 700 V VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 1.5 A Base Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature IB PD TJ TSTG 0.75 A 40 W +150 oC -55 to +150 oC .304(7.72) .285(7.52) .041(1.05) .037(0.95) .154(3.91) .150(3.81) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) .279(7.09) .275(6.99) 1 23 3oTyp .620(15.75) .600(15.25) .052(1.32) .048(1.22) 3oTyp .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 (0.55) Typ Dimensions in inches and (millimeters) 3oTyp 3oTyp Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions BVCEV 700 - - V IC=1mA, VBE(off)=1.5V Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA Collector Cutoff Current ICEV - - 1 mA VCE=700V, VBE(off)=1.5V Emitter Cutoff Current IEBO - - 1 mA VEB=9V VCE(sat)1 - Collector-Emitter Saturation Voltage(1) VCE(sat)2 - - 0.5 V IC=0.5A, IB=0.1A - 1 V IC=1A, IB=0.25A VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A Base-Emitter Saturation Voltage(1) VBE(sat)1 - VBE(sat)2 - - 1 V IC=0.5A, IB=0.1A - 1.2 V IC=1A, IB=0.25A DC Current Gain(1) hFE1 8 hFE2 5 - 40 - 25 - IC=0.5A, VCE=2V - IC=1A, VCE=2V (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
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| Part Number | Description |
|---|---|
| MJE13003D | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |