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MJE13003 - NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

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Datasheet Details

Part number MJE13003
Manufacturer DC COMPONENTS
File Size 222.86 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
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Other Datasheets by DC COMPONENTS

Part Number Description
MJE13003D TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJE13003 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126 Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEV 700 V VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 1.5 A Base Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature IB PD TJ TSTG 0.75 A 40 W +150 oC -55 to +150 oC .304(7.72) .285(7.52) .041(1.05) .037(0.95) .154(3.91) .150(3.81) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) .279(7.09) .275(6.99) 1 23 3oTyp .
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