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DG18N50 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG18N50 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG18N50 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG18N50
Manufacturer DGME
File Size 934.39 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG18N50-DGME.pdf
Additional preview pages of the DG18N50 datasheet.

DG18N50 Product details

Description

DG18N50N，， ，，，。 ，，。 DG18N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 18 0.26 25 V A Ω pF Symbol Package 1 /9

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