Datasheet4U Logo Datasheet4U.com

DG1N65 - N-CHANNEL ENHANCEMENT MODE MOSFET

📥 Download Datasheet

Preview of DG1N65 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number DG1N65
Manufacturer DGME
File Size 1.25 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG1N65-DGME.pdf

DG1N65 Product details

Description

DG1N65N,, ,,,。 ,,。 DG1N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 1.3 9.5 5.0 V A Ω pF Symbol Package 1 /11

📁 DG1N65 Similar Datasheet

  • DG1N15A - Schottky Barrier Diode (SHINDENGEN)
  • DG1 - MINIATURE CLAMPER / DAMPER GLASS PASSIVATED JUNCTION RECTIFIER (General)
  • DG1104B - SMT LED (Stanley Electric)
  • DG1111C - SMT LED (Stanley Electric)
  • DG1112H - SMT LED (Stanley Electric)
  • DG1208 - Analog Multiplexers (Maxim Integrated)
  • DG1209 - Analog Multiplexers (Maxim Integrated)
  • DG120X07T2 - IGBT (STARPOWER)
Other Datasheets by DGME
Published: |