Datasheet Details
| Part number | DG1N65S |
|---|---|
| Manufacturer | DGME |
| File Size | 645.39 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
 DG1N65S-DGME.pdf
|
| Part number | DG1N65S |
|---|---|
| Manufacturer | DGME |
| File Size | 645.39 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
DG1N65S-DGME.pdf
|
DG1N65SN，， ，，，。 ，，。 DG1N65S is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 0.5 12 3.6 V A Ω pF Symbol Package 1 /8
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