* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switch (UIS) Test in Production
* Low RDS(ON)
* Minimizes Power Losses
* Low Qg
* Minimizes Switching Losses
* < 1.1mm Package Profile
* Ideal for Thin Applicati
DMNH6009SPS Datasheet (831.62 KB)
DMNH6009SPS
831.62 KB
60v n-channel mosfet.
DMNH6009SPS
Green
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) Max 7.3mΩ @ VGS = 10V 15mΩ @ VGS = 4.
📁 Related Datasheet
DMNH6008SCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
.
DMNH6008SCT - N-CHANNEL MOSFET
(Diodes)
DMNH6008SCT
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) MAX 8.0mΩ @ VGS = 10V
ID MAX TC = +25°C
130A
Description
Th.
DMNH6008SCTQ - N-Channel MOSFET
(Diodes)
Green
DMNH6008SCTQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max 8.0mΩ @ VGS = 10V
ID TC = +25°C
130A
Features and Be.
DMNH6008SPS - 60V N-Channel MOSFET
(Diodes)
Product Summary
DMNH6008SPS
Green
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Features and Benefits
BVDSS 60V
RDS(ON) 8.0mΩ @ VGS = 1.
DMNH6008SPSQ - N-Channel MOSFET
(Diodes)
Green DMNH6008SPSQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Product Summary
Features and Benefits
BVDSS 60V
RDS(ON) 8.0mΩ @ VGS = 10V
.
DMNH6010SCTBQ - 60V N-CHANNEL MOSFET
(DIODES)
Green
DMNH6010SCTBQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max 10mΩ @ VGS = 10V
ID Max TC = +25°C
133A
D.
DMNH6011LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
:.
DMNH6011LK3 - N-channel MOSFET
(Diodes)
ADVANCED INFORMATION
Green DMNH6011LK3
55V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 55V
RDS(ON) Max
12mΩ @ VGS = 10V 18mΩ @ V.
