Part number:
DMNH6012SPS
Manufacturer:
File Size:
801.29 KB
Description:
60v n-channel mosfet.
DMNH6012SPS Datasheet (801.29 KB)
* BVDSS 60V RDS(ON) Max 11mΩ @ VGS = 10V ID Max TC = +25°C 50A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Power-management f
DMNH6012SPS Datasheet (801.29 KB)
DMNH6012SPS
801.29 KB
60v n-channel mosfet.
📁 Related Datasheet
DMNH6012SPSQ - 60V N-Channel MOSFET
(Diodes)
.
DMNH6012LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
:.
DMNH6012LK3 - N-CHANNEL MOSFET
(Diodes)
Green DMNH6012LK3
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) max
12mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V
ID max TC .
DMNH6012LK3Q - N-CHANNEL MOSFET
(Diodes)
Green DMNH6012LK3Q 60V 175°C N-CHANNEL ENHANCEMENT MOQDE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
12mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V
ID Max TC.
DMNH6010SCTBQ - 60V N-CHANNEL MOSFET
(DIODES)
Green
DMNH6010SCTBQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max 10mΩ @ VGS = 10V
ID Max TC = +25°C
133A
D.
DMNH6011LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
:.
DMNH6011LK3 - N-channel MOSFET
(Diodes)
ADVANCED INFORMATION
Green DMNH6011LK3
55V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 55V
RDS(ON) Max
12mΩ @ VGS = 10V 18mΩ @ V.
DMNH6008SCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
.
