DMT3020LSDQ Dual N-CHANNEL MOSFET

DIODES

Description

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V ID TC = +25°C 16A 13A .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: DMT3020LSDQ
Manufacturer: DIODES ↗
File Size: 490.81 KB
Datasheet: DMT3020LSDQ-DIODES.pdf
Description: Dual N-CHANNEL MOSFET

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Backlighting
* Power Management Functions
* DC-DC Converters SO-8 DMT3020LSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Featur

DMT3020LSDQ Distributors

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DMT3020LSDQ Dual N-CHANNEL MOSFET DIODES

DIODES DMT3020LSDQ-like datasheet