DMT3009LEV N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

AADDVVNAAENNCWCEEPD IRNINOENFDFWOUORPCRRTMMOAADTTIIUOCONTN Product Summary Device BVDSS Q1 & Q2 30V RDS(ON) Max 12mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMT3009LEV
Manufacturer: DIODES ↗
File Size: 503.63 KB
Datasheet: DMT3009LEV-DIODES.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low Gate Threshold Voltage
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

* Applications
* General Purpose Interfacing Switch
* Power Management Functions Mechanical Data
* Case: PowerDI®3333-8
* Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020
* Termi

DMT3009LEV Distributors

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DMT3009LEV N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMT3009LEV-like datasheet