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DMT3009LDT N-Channel MOSFET

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Description

Product Summary Device BVDSS Q1 & Q2 30V RDS(ON) Max 11.1mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V 22.0mΩ @ VGS = 3.8V ID Max TC = +25°C (Note 10) 30A 28A.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for.

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Features

* Low Gate Threshold Voltage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen- and Antimony-Free. “Green” Device (Note 3)

Applications

* Applications
* General Purpose Interfacing Switch

DMT3009LDT Distributors

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