DMT3009UDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

ADVANCED INFORMATION DMT3009UDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1& Q2 30V RDS(ON) Max 11.1mΩ @ VGS = 10V 15.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMT3009UDT
Manufacturer: DIODES ↗
File Size: 395.75 KB
Datasheet: DMT3009UDT-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Ultra Low Gate Threshold Voltage
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

DMT3009UDT Distributors

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DMT3009UDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMT3009UDT-like datasheet