DMT3009UFVW 30V N-CHANNEL MOSFET

DIODES

Description

DMT3009UFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 11mΩ @ VGS = 10V 13mΩ @ VGS = 4.5V ID Max TC.
and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance,.

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Datasheet Specifications

Part number: DMT3009UFVW
Manufacturer: DIODES ↗
File Size: 607.37 KB
Datasheet: DMT3009UFVW-DIODES.pdf
Description: 30V N-CHANNEL MOSFET

Features

* Ultra Low Gate Threshold Voltage
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Wettable Flank for Improved Optical Inspection
* ESD Protected Gate
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Ro

DMT3009UFVW Distributors

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DMT3009UFVW 30V N-CHANNEL MOSFET DIODES

DIODES DMT3009UFVW-like datasheet