* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Wettable Flank for Improved
DMT6016LPSW Datasheet (365.75 KB)
DMT6016LPSW
365.75 KB
60v n-channel mosfet.
DMT6016LPSW
60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) MAX
16.5mΩ @ VGS = 10V 26mΩ @ VGS = 4.5V
ID MAX .
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