* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Le
DMT61M8SPS Datasheet (429.15 KB)
DMT61M8SPS
429.15 KB
60v n-channel mosfet.
Product Summary
BVDSS 60V
RDS(ON) MAX 1.6mΩ @ VGS = 10V
ID MAX TC = +25°C
205A
Green
DMT61M8SPS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI50.
📁 Related Datasheet
DMT61M5SPSW - 60V N-CHANNEL MOSFET
(DIODES)
ADVANCED INFORMATION
Green
DMT61M5SPSW
60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) MAX 1.5mΩ @ VGS = 1.
DMT615MLFV - 60V N-CHANNEL MOSFET
(DIODES)
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
DMT615MLFV
60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX)
Product Summary
BVDSS 60V
RDS(ON) .
DMT616MLSS - 60V N-Channel MOSFET
(DIODES)
DMT616MLSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
14mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V
ID Max TA = +25°C
10A 8..
DMT6002LPS - 60V N-CHANNEL MOSFET
(Diodes)
Product Summary
BVDSS 60V
RDS(ON) Max
2mΩ @ VGS = 10V 3mΩ @ VGS = 6V
ID Max TC = +25°C
(Note 9) 100A
100A
DMT6002LPS
Green
60V N-CHANNEL ENHANCEME.
DMT6004LPS - N-Channel MOSFET
(Diodes)
Product Summary
BVDSS 60V
RDS(ON) Max 3.1mΩ @ VGS = 10V 4.5mΩ @ VGS = 4.5V
ID TC = +25°C
90A
85A
DMT6004LPS
Green
60V N-CHANNEL ENHANCEMENT MODE M.
DMT6004SCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DMT6004SCT
FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On.
DMT6004SCT - N-Channel MOSFET
(Diodes)
Product Summary
BVDSS 60V
RDS(ON) max 3.65mΩ @ VGS = 10V
ID TC = +25°C
(Note 9) 100A
DMT6004SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
1.
DMT6004SPS - 60V N-Channel MOSFET
(DIODES)
Product Summary
DMT6004SPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Features
BVDSS 60V
RDS(ON) MAX 3.1mΩ @ VGS = 10V
ID MAX TC = .
