* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* Low Input Capacitance
* Fast Switching Speed
* Wettable Flank for Improved Optica
DMTH10H032LPDWQ Datasheet (588.52 KB)
DMTH10H032LPDWQ
588.52 KB
100v dual n-channel mosfet.
DMTH10H032LPDWQ
Green
100V 175°C DUAL CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 100V
RDS(ON) Max
32mΩ @ VGS = 10V 50mΩ @ .
📁 Related Datasheet
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Product Summary
BVDSS 100V
RDS(ON) Max
32mΩ @ VGS = 10V 50mΩ @ V.
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100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 100V
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BVDSS 100V
RDS(ON) Max
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RDS(ON) Max 30mΩ @ VGS = 10V 50mΩ @ VGS = 4..
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100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 100V
RDS(ON) 32mΩ @ VGS = 10V
ID TC = +25°C
25A
.
