DMTH10H4M6SPS 100V N-Channel MOSFET

DIODES

Description

DMTH10H4M6SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 4.6mΩ @ VGS = 10V ID TC = +25°C 11.
and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

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Datasheet Specifications

Part number: DMTH10H4M6SPS
Manufacturer: DIODES ↗
File Size: 730.20 KB
Datasheet: DMTH10H4M6SPS-DIODES.pdf
Description: 100V N-Channel MOSFET

Features

* Rated to +175C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
* Motor controls
* DC-DC converters

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DMTH10H4M6SPS 100V N-Channel MOSFET DIODES

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