DMTH10H4M6SPSW 100V N-CHANNEL MOSFET

DIODES

Description

ADVANCED INFORMATION DMTH10H4M6SPSW 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 4.9mΩ @ VGS = 10V ID Max.
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

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Datasheet Specifications

Part number: DMTH10H4M6SPSW
Manufacturer: DIODES ↗
File Size: 789.91 KB
Datasheet: DMTH10H4M6SPSW-DIODES.pdf
Description: 100V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* requiring specific change control (i. e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www. diodes. com/quality/product-definitions/ Applications
* Motor controls
* DC-

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DMTH10H4M6SPSW 100V N-CHANNEL MOSFET DIODES

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