DMTH6004LPSW N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMTH6004LPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) Max 3.1mΩ @VGS = 10V 4.5mΩ @VGS = 4.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMTH6004LPSW
Manufacturer: DIODES ↗
File Size: 465.21 KB
Datasheet: DMTH6004LPSW-DIODES.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Primary switches in isolated DC-DC
* Synchronous rectifiers

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DMTH6004LPSW N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMTH6004LPSW-like datasheet