DS1258W Datasheet (Dallas Semiconducotr) - 3.3V 128k x 16 Nonvolatile

DS1258W, 3.3V 128k x 16 Nonvolatile

A0 - A16 DQ0 - DQ15 CEU CEL WE OE VCC GND - Address Inputs - Data In/Data Out - Chip Enable Upper Byte - Chip Enable Lower Byte - Write Enable - Output Enable - Power (+3.3V) - Ground DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM,

DS1258W Features

* 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte Chip Select Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 100ns