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MJD32C PNP EPITAXIAL PLANAR TRANSISTOR

MJD32C Description

DC COMPONENTS CO., LTD.R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR .
Designed for use in general purpose amplifier and switching applications.

MJD32C Applications

* Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rati

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Datasheet Details

Part number
MJD32C
Manufacturer
Dc Components
File Size
242.08 KB
Datasheet
MJD32C-DcComponents.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR

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PNP EPITAXIAL PLANAR TRANSISTOR Dc Components
Dc Components MJD32C-like datasheet