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MJD3055

Silicon NPN Power Transistor

MJD3055 General Description


*Excellent Safe Operating Area
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A
*Complement to Type MJD2955
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed fo.

MJD3055 Datasheet (251.77 KB)

Preview of MJD3055 PDF

Datasheet Details

Part number:

MJD3055

Manufacturer:

Inchange Semiconductor

File Size:

251.77 KB

Description:

Silicon npn power transistor.

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MJD3055 Silicon NPN Power Transistor Inchange Semiconductor

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