MJD3055 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 .
Excellent Safe Operating Area. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Complement to Type MJD2955. DPA.

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Datasheet Specifications

Part number: MJD3055
Manufacturer: Inchange Semiconductor
File Size: 251.77 KB
Datasheet: MJD3055-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Coll

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MJD3055 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD3055-like datasheet