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MJD350

Silicon PNP Power Transistor

MJD350 General Description


*Collector

*Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min)
*Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA
*DPAK for Surface Mount Applications
*Complement to Type MJD340
*Minimum Lot-to-Lot variations for robust device performance and reliabl.

MJD350 Datasheet (205.83 KB)

Preview of MJD350 PDF

Datasheet Details

Part number:

MJD350

Manufacturer:

Inchange Semiconductor

File Size:

205.83 KB

Description:

Silicon pnp power transistor.

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MJD350 Silicon PNP Power Transistor Inchange Semiconductor

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