MJD112 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 .
High DC current gain. Lead formed for surface mount applications(NO suffix). Straight lead(IPAK,“－I”suffix). Built-in a damper diode.

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Datasheet Specifications

Part number: MJD112
Manufacturer: Inchange Semiconductor
File Size: 257.64 KB
Datasheet: MJD112-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* NO suffix)
* Straight lead(IPAK,“－I”suffix)
* Built-in a damper diode at E-C
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for general purpose amplifier and low speed switching applications. ABSOL

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MJD112 Silicon NPN Power Transistor Inchange Semiconductor

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