MJD117L, MJD117 Datasheet - KEC

MJD117L EPITAXIAL PLANAR PNP TRANSISTOR

MJD117L Features

* High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Puls

MJD117-KEC.pdf

MJD117L Datasheet Preview — This datasheet PDF includes multiple part numbers: MJD117L, MJD117. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MJD117L, MJD117

Manufacturer:

KEC

File Size:

392.56 KB

Description:

Epitaxial planar pnp transistor.

Note:

This datasheet PDF includes multiple part numbers: MJD117L, MJD117.
Please refer to the document for exact specifications by model.

MJD117L Distributor

📁 Related Datasheet

MJD117 PNP Silicon Darlington Transistor (Fairchild Semiconductor)

MJD117 Silicon PNP Power Transistor (Inchange Semiconductor)

MJD117 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS (CDIL)

MJD117 PNP Transistor (JCET)

MJD117 Epitaxial Planar PNP Transistor (GME)

MJD117 Complementary Darlington Power Transistor (ON Semiconductor)

MJD117 Complementary power Darlington transistor (STMicroelectronics)

MJD117 Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

TAGS

MJD117L MJD117 EPITAXIAL PLANAR PNP TRANSISTOR KEC