MJD117L, MJD117 EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

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MJD117L Datasheet Preview — This datasheet PDF includes multiple part numbers: MJD117L, MJD117. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MJD117L, MJD117
Manufacturer: KEC
File Size: 392.56 KB
Datasheet: MJD117-KEC.pdf
Description: EPITAXIAL PLANAR PNP TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: MJD117L, MJD117.
Please refer to the document for exact specifications by model.

Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Puls

MJD117L Distributors

📁 Related Datasheet

MJD117 MJD117T4 MJD112 MJD112T4 MJD122 MJD122-1

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MJD117 EPITAXIAL PLANAR PNP TRANSISTOR KEC

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