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MJD122-1 Datasheet - ST Microelectronics

MJD122-1 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epi taxial Bas e technology for cost-eff ective performance. R1 Typ. = 10 KΩ R 2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP VCBO VCEO VEBO IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = .
MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 s s s Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 (DPAK) (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube Tape & Reel Tube 3 3 2 1 s s s STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX “-1”) SURFACE MOUNTING T.

MJD122-1_STMicroelectronics.pdf

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Datasheet Details

Part number:

MJD122-1

Manufacturer:

STMicroelectronics ↗

File Size:

91.57 KB

Description:

Complementary power darlington transistors.

MJD122-1 Distributor

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MJD122-1 MJD122-1 COMPLEMENTARY POWER DARLINGTON TRANSISTORS ST Microelectronics