MJD127S
MCC
212.20kb
Pnp transistor.
TAGS
📁 Related Datasheet
MJD127 - Complementary Darlington Power Transistor
(ON Semiconductor)
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general p.
MJD127 - PNP Transistor
(Fairchild)
MJD127
MJD127
D-PAK for Surface Mount Applications
• • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Appl.
MJD127 - Complementary power Darlington transistors
(ST Microelectronics)
MJD122 MJD127
Complementary power Darlington transistors
Features
■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emit.
MJD127 - Silicon PNP Darlington Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
MJD127
DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for su.
MJD127 - SILICON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD122/D
Complementary Darlington Power Transistors
DPAK For Surface Mount Application.
MJD127 - Silicon PNP epitaxial planer Transistors
(MCC)
0-'
Features
+LJK'&&XUUHQW*DLQ %XLOW LQD'DPSHU'LRGHDW( & +DORJHQ)UHH *UHHQ 'HYLFH1RWH 0RLVWXUH6HQVLWLYLW\/HYHO (SR[\.
MJD127 - Epitaxial Planar PNP Transistor
(GME)
Epitaxial Planar PNP Transistor
FEATURES
High DC Current Gain. Built-in a Damper Diode at E-C.
Pb
Lead-free
Lead Formed for Surface Mount Ap.
MJD127 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD127 TRANSISTOR (PNP)
FEATURES High DC Current Gain El.
MJD127-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS
(ST Microelectronics)
MJD122-1 / MJD122T4 MJD127-1 / MJD127T4
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1
s s s
Marking MJ.
MJD127T4 - Complementary power Darlington transistors
(ST Microelectronics)
MJD122 MJD127
Complementary power Darlington transistors
Features
■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emit.