MJD128 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min). DPAK for Surface Mount.

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Datasheet Specifications

Part number: MJD128
Manufacturer: Inchange Semiconductor
File Size: 206.41 KB
Datasheet: MJD128-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Em

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MJD128 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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