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MJD128 Datasheet - Inchange Semiconductor

MJD128 Silicon PNP Darlington Power Transistor

*High DC Current Gain- : hFE = 1000(Min)@ IC= -4A *Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) *DPAK for Surface Mount Applications *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general purpose a.

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Datasheet Details

Part number:

MJD128

Manufacturer:

Inchange Semiconductor

File Size:

206.41 KB

Description:

Silicon pnp darlington power transistor.

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MJD128 MJD128 Silicon PNP Darlington Power Transistor Inchange Semiconductor