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MJD253 - Silicon PNP Power Transistor

MJD253 Description

isc Silicon PNP Power Transistor .
High DC Current Gain- : hFE = 40(Min) @ IC= -0. Low Collector Saturation Voltage- : VCE(sat) = -0. Complement to.

MJD253 Applications

* Designed for low voltage, low -power ,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous

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Datasheet Details

Part number
MJD253
Manufacturer
Inchange Semiconductor
File Size
243.96 KB
Datasheet
MJD253-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD253-like datasheet