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MJD253 Datasheet - Inchange Semiconductor

MJD253 Silicon PNP Power Transistor

*High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A *Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A *Complement to the NPN MJD243 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low voltage, lo.

MJD253 Datasheet (243.96 KB)

Preview of MJD253 PDF

Datasheet Details

Part number:

MJD253

Manufacturer:

Inchange Semiconductor

File Size:

243.96 KB

Description:

Silicon pnp power transistor.

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MJD253 Silicon PNP Power Transistor Inchange Semiconductor

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