MJD127 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 .
Low Collector-Emitter saturation voltage. Lead formed for surface mount applications. High DC current gain. 100% tested. Minimum.

📥 Download Datasheet

MJD127 Datasheet Preview — Preview of MJD127 PDF

Datasheet Specifications

Part number: MJD127
Manufacturer: Inchange Semiconductor
File Size: 215.94 KB
Datasheet: MJD127-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* High DC current gain
* 100% tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C

MJD127 Distributors

📁 Related Datasheet

MJD127-1 MJD127S MJD127T4 MJD122 MJD122-1 MJD128T4G

📌 All Tags

Silicon PNP Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD127-like datasheet