Datasheet Details
- Part number
- MJD127
- Manufacturer
- Inchange Semiconductor
- File Size
- 215.94 KB
- Datasheet
- MJD127-InchangeSemiconductor.pdf
- Description
- Silicon PNP Darlington Power Transistor
MJD127 Description
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 .
Low Collector-Emitter saturation voltage.
Lead formed for surface mount applications.
High DC current gain.
100% tested.
Minimum.
MJD127 Applications
* High DC current gain
* 100% tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
* Designed for general purpose amplifier and low speed
switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO C
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