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MJD127 Datasheet - Inchange Semiconductor

MJD127 Silicon PNP Darlington Power Transistor

*Low Collector-Emitter saturation voltage *Lead formed for surface mount applications *High DC current gain *100% tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general purpose amplifier and low speed swi.

MJD127-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJD127

Manufacturer:

Inchange Semiconductor

File Size:

215.94 KB

Description:

Silicon pnp darlington power transistor.

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MJD127 MJD127 Silicon PNP Darlington Power Transistor Inchange Semiconductor