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MJD127

Silicon PNP Darlington Power Transistor

MJD127 General Description


*Low Collector-Emitter saturation voltage
*Lead formed for surface mount applications
*High DC current gain
*100% tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for general purpose amplifier and low speed swi.

MJD127 Datasheet (215.94 KB)

Preview of MJD127 PDF

Datasheet Details

Part number:

MJD127

Manufacturer:

Inchange Semiconductor

File Size:

215.94 KB

Description:

Silicon pnp darlington power transistor.

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MJD127 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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