MJD127 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 .
Low Collector-Emitter saturation voltage. Lead formed for surface mount applications. High DC current gain. 100% tested. Minimum.

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Datasheet Specifications

Part number: MJD127
Manufacturer: Inchange Semiconductor
File Size: 215.94 KB
Datasheet: MJD127-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* High DC current gain
* 100% tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C

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MJD127 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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