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MJD148 - Silicon NPN Power Transistor

MJD148 Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE = 85(Min) @ IC= 0. Low Collector Saturation Voltage- : VCE(sat) = 0. DPAK for Surface Mount Ap.

MJD148 Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Co

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Datasheet Details

Part number
MJD148
Manufacturer
Inchange Semiconductor
File Size
205.53 KB
Datasheet
MJD148-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD148-like datasheet