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MJD148

Silicon NPN Power Transistor

MJD148 General Description


*DC Current Gain- : hFE = 85(Min) @ IC= 0.5A
*Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in general purpo.

MJD148 Datasheet (205.53 KB)

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Datasheet Details

Part number:

MJD148

Manufacturer:

Inchange Semiconductor

File Size:

205.53 KB

Description:

Silicon npn power transistor.

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