MJD148 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE = 85(Min) @ IC= 0. Low Collector Saturation Voltage- : VCE(sat) = 0. DPAK for Surface Mount Ap.

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Datasheet Specifications

Part number: MJD148
Manufacturer: Inchange Semiconductor
File Size: 205.53 KB
Datasheet: MJD148-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Co

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Silicon NPN Power Transistor Inchange Semiconductor

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