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MJD112L, MJD112 Datasheet - KEC

MJD112L EPITAXIAL PLANAR NPN TRANSISTOR

MJD112L Features

* High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse

MJD112-KEC.pdf

This datasheet PDF includes multiple part numbers: MJD112L, MJD112. Please refer to the document for exact specifications by model.
MJD112L Datasheet Preview Page 2

Datasheet Details

Part number:

MJD112L, MJD112

Manufacturer:

KEC

File Size:

391.48 KB

Description:

Epitaxial planar npn transistor.

Note:

This datasheet PDF includes multiple part numbers: MJD112L, MJD112.
Please refer to the document for exact specifications by model.

MJD112L Distributor

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MJD112L MJD112 EPITAXIAL PLANAR NPN TRANSISTOR KEC