MJD112L, MJD112 Datasheet - KEC

MJD112L EPITAXIAL PLANAR NPN TRANSISTOR

MJD112L Features

* High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse

MJD112-KEC.pdf

MJD112L Datasheet Preview — This datasheet PDF includes multiple part numbers: MJD112L, MJD112. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MJD112L, MJD112

Manufacturer:

KEC

File Size:

391.48 KB

Description:

Epitaxial planar npn transistor.

Note:

This datasheet PDF includes multiple part numbers: MJD112L, MJD112.
Please refer to the document for exact specifications by model.

MJD112L Distributor

📁 Related Datasheet

MJD112 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

MJD112 Silicon NPN epitaxial planer Transistors (MCC)

MJD112 Silicon NPN Power Transistor (Inchange Semiconductor)

MJD112 NPN Silicon Darlington Transistor (Fairchild Semiconductor)

MJD112 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS (CDIL)

MJD112 NPN Transistor (JCET)

MJD112 Epitaxial Planar NPN Transistor (GME)

MJD112 Complementary Darlington Power Transistor (ON Semiconductor)

TAGS

MJD112L MJD112 EPITAXIAL PLANAR NPN TRANSISTOR KEC