MJD112L, MJD112 EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

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MJD112L Datasheet Preview — This datasheet PDF includes multiple part numbers: MJD112L, MJD112. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MJD112L, MJD112
Manufacturer: KEC
File Size: 391.48 KB
Datasheet: MJD112-KEC.pdf
Description: EPITAXIAL PLANAR NPN TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: MJD112L, MJD112.
Please refer to the document for exact specifications by model.

Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse

MJD112L Distributors

📁 Related Datasheet

MJD112 MJD112T4 MJD117 MJD117T4 MJD122 MJD122-1

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MJD112 EPITAXIAL PLANAR NPN TRANSISTOR KEC

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