Datasheet4U Logo Datasheet4U.com

MJD112L, MJD112 - EPITAXIAL PLANAR NPN TRANSISTOR

MJD112L Description

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

MJD112L Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MJD112L, MJD112. Please refer to the document for exact specifications by model.
datasheet Preview Page 2

Datasheet Details

Part number
MJD112L, MJD112
Manufacturer
KEC
File Size
391.48 KB
Datasheet
MJD112-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: MJD112L, MJD112.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • MJD112 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MJD112T4 - Complementary power Darlington transistors (STMicroelectronics)
  • MJD117 - PNP Silicon Darlington Transistor (Fairchild Semiconductor)
  • MJD117T4 - Complementary power Darlington transistors (STMicroelectronics)
  • MJD122 - Epitaxial Planar NPN Transistor (GME)
  • MJD122-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127 - Complementary Darlington Power Transistor (ON Semiconductor)
  • MJD127-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)

📌 All Tags

EPITAXIAL PLANAR NPN TRANSISTOR KEC
KEC MJD112L-like datasheet