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MJD243 - Silicon NPN Power Transistor

MJD243 Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE = 40(Min) @ IC= 0. Low Collector Saturation Voltage- : VCE(sat) = 0. Complement to the PNP.

MJD243 Applications

* Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Co

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Datasheet Details

Part number
MJD243
Manufacturer
Inchange Semiconductor
File Size
242.07 KB
Datasheet
MJD243-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD243-like datasheet