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MJD243 Datasheet - Inchange Semiconductor

MJD243 Silicon NPN Power Transistor

*DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A *Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A *Complement to the PNP MJD253 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low power audio amplif.

MJD243-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJD243

Manufacturer:

Inchange Semiconductor

File Size:

242.07 KB

Description:

Silicon npn power transistor.

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MJD243 MJD243 Silicon NPN Power Transistor Inchange Semiconductor