Datasheet4U Logo Datasheet4U.com

MJD117 - Silicon PNP Power Transistor

MJD117 Description

isc Silicon PNP Darlington Power Transistor .
High DC current gain. Built-in a damper diode at E-C. Lead formed for surface mount applications(NO suffix). Straight lead(IPAK,“－I”s.

MJD117 Applications

* NO suffix)
* Straight lead(IPAK,“－I”suffix)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

📥 Download Datasheet

Preview of MJD117 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MJD117
Manufacturer
Inchange Semiconductor
File Size
250.42 KB
Datasheet
MJD117-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

📁 Related Datasheet

  • MJD117L - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • MJD117T4 - Complementary power Darlington transistors (STMicroelectronics)
  • MJD112 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • MJD112T4 - Complementary power Darlington transistors (STMicroelectronics)
  • MJD122 - Epitaxial Planar NPN Transistor (GME)
  • MJD122-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127 - Complementary Darlington Power Transistor (ON Semiconductor)

📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD117-like datasheet