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MJD210

Silicon PNP Power Transistor

MJD210 General Description


*High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A
*Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
*Complement to the NPN MJD200
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for low voltage, lo.

MJD210 Datasheet (206.59 KB)

Preview of MJD210 PDF

Datasheet Details

Part number:

MJD210

Manufacturer:

Inchange Semiconductor

File Size:

206.59 KB

Description:

Silicon pnp power transistor.

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