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MJD210 - Silicon PNP Power Transistor

MJD210 Description

isc Silicon PNP Power Transistor .
High DC Current Gain- : hFE = 70(Min) @ IC= -0. Low Collector Saturation Voltage- : VCE(sat) = -0. Complement to.

MJD210 Applications

* Designed for low voltage, low -power ,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5

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Datasheet Details

Part number
MJD210
Manufacturer
Inchange Semiconductor
File Size
206.59 KB
Datasheet
MJD210-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD210-like datasheet