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MJD210 Datasheet - Inchange Semiconductor

MJD210 Silicon PNP Power Transistor

*High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A *Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A *Complement to the NPN MJD200 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low voltage, lo.

MJD210-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJD210

Manufacturer:

Inchange Semiconductor

File Size:

206.59 KB

Description:

Silicon pnp power transistor.

MJD210 Distributor

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MJD210 MJD210 Silicon PNP Power Transistor Inchange Semiconductor