MJD200 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE = 70(Min) @ IC= 0. Low Collector Saturation Voltage- : VCE(sat) = 0. Complement to the PNP.

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Datasheet Specifications

Part number: MJD200
Manufacturer: INCHANGE
File Size: 203.01 KB
Datasheet: MJD200-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Cont

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