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MJD200 - NPN Transistor

MJD200 Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE = 70(Min) @ IC= 0. Low Collector Saturation Voltage- : VCE(sat) = 0. Complement to the PNP.

MJD200 Applications

* Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Cont

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Datasheet Details

Part number
MJD200
Manufacturer
INCHANGE
File Size
203.01 KB
Datasheet
MJD200-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJD200-like datasheet