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MJD200

NPN Transistor

MJD200 General Description


*DC Current Gain- : hFE = 70(Min) @ IC= 0.5A
*Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A
*Complement to the PNP MJD210
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for low power audio amplifi.

MJD200 Datasheet (203.01 KB)

Preview of MJD200 PDF

Datasheet Details

Part number:

MJD200

Manufacturer:

INCHANGE

File Size:

203.01 KB

Description:

Npn transistor.

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MJD200 NPN Transistor INCHANGE

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